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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 1200 550 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 4 Collector current-Peak 8 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 2 4 30 150 -55~150 UNIT V V V A A A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain At rated volatge IC=2A ; VCE=5V IC=1mA ; VCE=5V 10 10 0.1 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A MIN 550 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Transition frequency IC=0.4A ; VCE=10V 10 Turn-on time Storage time 0.8 IC=2A;IB1=0.4A IB2=0.8A ,RL=75| VBB2=4V 3.0 Fall time 0.3 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4940 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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